PART |
Description |
Maker |
MV1402-5MCHIP MV1401B-4M MV1405B-2M MV1403-6MCHIP |
360 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE 550 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-14 250 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 175 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE 100 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE 120 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
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GCX1205-23 GCX1217-23 GCX1206-23 GCX1213-23 GCX120 |
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 5.6 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE VARACTOR DIODES Surface Mount SOT23 Abrupt Junction TM 3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
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MICROSEMI CORP-LOWELL Microsemi Corporation
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MMVL105GT1 ON2289 |
VOLTAGE VARIABLE CAPACITANCE DIODE 2.15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE 30 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE From old datasheet system
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Leshan Radio Company, Ltd. ONSEMI[ON Semiconductor]
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KVX2162 KVX2301 KVX2201-23-4 KVX3201A-23-3 KVX3201 |
SURFACE MOUNT VARACTOR DIODES Wide Bandwidth SOT-23 Hyperabrupt TM L BAND, 50 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE L BAND, 12 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE L BAND, 29 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
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Microsemi Corporation MICROSEMI CORP-LOWELL
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HVU200A |
29.75 pF, 32 V, SILICON, VARIABLE CAPACITANCE DIODE Variable Capacitance Diode for Electronic Tuning(?ㄤ??佃?璋??????靛?浜??绠?
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Hitachi,Ltd.
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HVB350BYP |
Silicon Epitaxial Planar Variable Capacitance Diode for VCO 16.25 pF, SILICON, VARIABLE CAPACITANCE DIODE CMPAK-4
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Renesas Electronics Corporation Samsung Semiconductor Co., Ltd.
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HVU355B |
Diodes>Variable Capacitance Variable Capacitance Diode for VCO
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Renesas Electronics Corporation
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HVU359 |
Diodes>Variable Capacitance Variable Capacitance Diode for VCO
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Renesas Electronics Corporation
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1M1409 1M5474B 1M5139B 1M5463B |
27 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE VHF-UHF BAND, 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 6.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE VHF-UHF BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
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V27D V27BCO V27CCO V27E V27ECCO V27ACO V27EACO V12 |
27 pF, 22 V, SILICON, VARIABLE CAPACITANCE DIODE 27 pF, 72 V, SILICON, VARIABLE CAPACITANCE DIODE 12 pF, 110 V, SILICON, VARIABLE CAPACITANCE DIODE 10 pF, 70 V, SILICON, VARIABLE CAPACITANCE DIODE
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1N5474 1N5448A 1N5443B 1N5447C 1N5445A 1N5476A JAN |
68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
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GC3202-00 GC3205-50 |
UHF BAND, 21.5 pF, 180 V, SILICON, VARIABLE CAPACITANCE DIODE C BAND, 2.25 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE
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MICROSEMI CORP-LOWELL
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